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1

Pre-amorphization damage in ion-implanted silicon

Schreutelkamp, R.J., Custer, J.S., Liefting, J.R., Lu, W.X., Saris, F.W.

Journal:

Materials Science Reports

Year:

1991

Language:

english

File:

PDF, 7.81 MB

english, 1991

2

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Noda, T., Vandervorst, W., Felch, S., Parihar, V., Cuperus, A., Mcintosh, R., Vrancken, C., Rosseel, E., Bender, H., Van Daele, B., Niwa, M., Umimoto, H., Schreutelkamp, R., Absil, P. P., Jurczak, M.,

Year:

2007

Language:

english

File:

PDF, 2.33 MB

english, 2007

3

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts

A.S. Vercaemst, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon, W. De Bosscher, R.J. Schreutelkamp

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 739 KB

english, 1993

4

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Eneman, G., Verheyen, P., Rooyackers, R., Nouri, F., Washington, L., Schreutelkamp, R., Moroz, V., Smith, L., An De Keersgieter, Jurczak, M., Kristin De Meyer

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 609 KB

english, 2006

5

Impact of silicidation on the excess noise behaviour of mos transistors

E.P Vandamme, L.K.J Vandamme, C Claeys, E Simoen, R.J Schreutelkamp

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 498 KB

english, 1995

6

Two-step anneals to avoid bridging during Co silicidation

R.J. Schreutelkamp, P. Vandenabeele, B. Deweerdt, R. Verbeeck, K. Maex

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 461 KB

english, 1993

7

[IEEE 2005 Symposium on VLSI Technology - Kyoto, Japan (2005.06.14-2005.06.16)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Layout impact on the performance of a locally strained PMOSFET

Eneman, S., Verheyen, P., Rooyackers, R., Nouri, F., Washington, L., Degraeve, R., Kaczer, B., Moroz, V., De Keersgieter, A., Schreutelkamp, R., Kawaguchi, M., Kim, Y., Samoilov, A., Smith, L., Absil,

Year:

2005

Language:

english

File:

PDF, 404 KB

english, 2005

8

Leakage Current Control in Recessed SiGe Source/Drain Junctions

Claeys, C., Gonzalez, M. Bargallo, Eneman, G., Verheyen, P., Bender, H., Schreutelkamp, R., Washington, L., Nouri, F., Simoen, E.

Journal:

Journal of The Electrochemical Society

Year:

2007

Language:

english

File:

PDF, 1.02 MB

english, 2007

9

[IEEE 2009 International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2009.06.11-2009.06.12)] 2009 International Workshop on Junction Technology - Junction anneal sequence optimization for advanced high-k / metal gate CMOS technology

Ortolland, C., Ragnarsson, L.-A., Kerner, C., Chiarella, T., Rosseel, E., Okuno, Y., Favia, P., Richard, O., Everaert, J.-L., Schram, T., Kubicek, S., Absil, P.P., Biesemans, S., Schreutelkamp, R., Ho

Year:

2009

Language:

english

File:

PDF, 534 KB

english, 2009

10

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA ()] 2006 International SiGe Technology and Device Meeting - Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions

Bargallo Gonzalez, M., Eneman, G., Verheyen, P., Claeys, C., Benedetti, A., Bender, H., De Meyer, K., Simoen, E., Schreutelkamp, R., Washington, L., Nouri, F.

Year:

2006

Language:

english

File:

PDF, 1.97 MB

english, 2006

11

Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

E Roca, J Vanhellemont, R.J Schreutelkamp, J Vermeiren

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 419 KB

english, 1994

12

Self-Aligned Suicides for ULSI

Maex, Karen, Schreutelkamp, Rob

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 2.20 MB

english, 1992

13

[IEEE 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Cannizzaro, Catania, Italy (2007.10.2-2007.10.5)] 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Impact of sub-melt laser annealing on Si1-xGex source /drain defectivity

Rosseel, E., Lu, J.P., Hikavyy, A., Verheyen, P., Hoffmann, T., Richard, O., Geypen, J., Bender, H., Loo, R., Absil, P., Intosh, R. Mc, Felch, S. B., Schreutelkamp, R.

Year:

2007

Language:

english

File:

PDF, 3.13 MB

english, 2007

14

Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

A. Pérez-Rodríguez, E. Roca, T. Jawhari, J.R. Morante, R.J. Schreutelkamp

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 574 KB

english, 1994

15

Structural and electrical characterization of Si(100) implanted with P+ and Si+ ions along the [100] channelling direction

R.J. Schreutelkamp, R. De Reus, F.W. Saris, R.E. Kaim, J.F.M. Westendorp, K.T.F. Janssen, J.J.M. Ottenheim

Journal:

Materials Science and Engineering: B

Year:

1990

Language:

english

File:

PDF, 1.47 MB

english, 1990

16

Addendum to “range straggling of MeV ions in amorphous silicon; discrepancies with TRIM”

R.J. Schreutelkamp, J.R. Liefting, P.M. Zagwijn, W.X. Lu, F.W. Saris

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1990

Language:

english

File:

PDF, 184 KB

english, 1990

17

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Wang, Zhong-lie, Zhang, Bo-xu, Zhao, Qing-tai, Li, Qi, Liefting, J. R., Schreutelkamp, R. J., Saris, F. W.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1015 KB

english, 1992

18

Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Raineri, V., Schreutelkamp, R. J., Saris, F. W., Janssen, K. T. F., Kaim, R. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 608 KB

english, 1991

19

Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal

Severi, Simone, Augendre, Emmanuel, Pawlak, Bartek, Eyben, Pierre, Noda, Taiji, Felch, Susan, Falepin, Annelies, Parihar, Vijay, Schreutelkamp, Robert, Vandervorst, Wilfried, De Meyer, Kristin

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 278 KB

english, 2006

20

Electrically active, ion implanted boron at the solubility limit in silicon

Liefting, J. R., Schreutelkamp, R. J., Vanhellemont, J., Vandervorst, W., Maex, K., Custer, J. S., Saris, F. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 625 KB

english, 1993

21

Influence of Phosphorus Dopant Concentration on Recrystallization of Buried Amorphous Layers in SI(100) Produced by Channeled Implants

Schreutelkamp, R. J., Janssen, K. T. F., Saris, F. W., Westendorp, J. F. M., Kaim, R. E.

Journal:

MRS Proceedings

Year:

1988

Language:

english

File:

PDF, 406 KB

english, 1988

22

SPIE Proceedings [SPIE SPIE 31st International Symposium on Advanced Lithography - San Jose, CA (Sunday 19 February 2006)] Metrology, Inspection, and Process Control for Microlithography XX - Advanced CDSEM matching methodology for OPC litho cell-based matching verification

Adan, Ofer, Archie, Chas N., Cramer, Hugo, Van Brederode, Erik, Schreutelkamp, Robert, Englard, Ilan

Year:

2006

Language:

english

File:

PDF, 387 KB

english, 2006

23

Reduction of secondary defect formation in MeV As ion implanted Si(100)

R.J. Schreutelkamp, W.X. Lu, J.R. Liefting, V. Raineri, J.S. Custer, F.W. Saris

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 559 KB

english, 1991

24

Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics

Rothschild, A., Kraus, P. A., Chua, T.C., Nouri, F., Cubaynes, F.N., Veloso, A., Mertens, S., Date, L., Schreutelkamp, R., Schaekers, M.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 73 KB

english, 2004

25

The role of extended defects on transient boron diffusion in ion-implanted silicon

R.J. Schreutelkamp, J.S. Custer, V. Raineri, W.X. Lu, J.R. Liefting, F.W. Saris, K.T.F. Janssen, P.F.H.M. van der Meulen, R.E. Kaim

Journal:

Materials Science and Engineering: B

Year:

1992

Language:

english

File:

PDF, 2.96 MB

english, 1992

26

O-127 How Good Is Life After Heart Transplantation, Children’s Perception

Schreutelkamp, DJ, van der Holst, M, van Osch- Gevers, M, Utens, E, Dalinghaus, M, Ista, WG, Kraemer, US

Journal:

Archives of Disease in Childhood

Year:

2014

Language:

english

File:

PDF, 78 KB

english, 2014

27

Dislocation formation in silicon implanted at different temperatures

J.R. Liefting, J.S. Custer, R.J. Schreutelkamp, F.W. Saris

Journal:

Materials Science and Engineering: B

Year:

1992

Language:

english

File:

PDF, 2.83 MB

english, 1992

28

Avoidable surgical consultations in women with a positive screening mammogram: Experience from a southern region of the Dutch breast screening programme

Schreutelkamp, J.L., Kwee, R.M., de Booij, M., Adriaensen, M.E.A.P.M.

Journal:

European Journal of Radiology

Year:

2014

Language:

english

File:

PDF, 607 KB

english, 2014

29

[IEEE The 17th Annual SEMI/IEEE ASMC 2006 Conference - Boston, MA (May 22-24, 2006)] The 17th Annual SEMI/IEEE ASMC 2006 Conference - High and Hyper NA Immersion Lithography using Advanced Patterning Film APF TM

van der Reijden, M.J., Op de Beeck, M., Sleeckx, E., Jaenen, P., Kunnen, E., Degroote, B., Wendy Yeh,, Schreutelkamp, R.

Year:

2006

Language:

english

File:

PDF, 1.03 MB

english, 2006

30

Formation of ultrathin CoSi2 films using a two-step limited reaction process

Schreutelkamp, R.J., Coppye, W., De Bosscher, W., van Meirhaeghe, R., van Meirhaeghe, L., Vanhellemont, J., Deweerdt, B., Lauwers, A., Maex, K.

Journal:

Journal of Materials Research

Year:

1993

Language:

english

File:

PDF, 3.19 MB

english, 1993

31

The Carbon Co-implant with Spike RTA Solution for Boron Extension

Pawlak, Bartek, Augendre, Emmanuel, Severi, Simone, Eyben, Pierre, Janssens, Tom, Falepin, Annelies, Absil, Philippe, Vandervorst, Wilfried, Felch, Susan, Collart, Erik, Schreutelkamp, Robert, Cowern,

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 255 KB

english, 2006

32

O-128 Blessing Of Curse: How Do Parents Perceive The Health Related Quality Of Life Of Their Child After Paediatric Heart Transplantation?

van der Holst, M, Schreutelkamp, DJ, van Osch- Gevers, M, Utens, E, Dalinghaus, M, Ista, WG, Kraemer, US

Journal:

Archives of Disease in Childhood

Year:

2014

Language:

english

File:

PDF, 92 KB

english, 2014

33

Pre-amorphization damage in Si(100) implanted with high mass MeV ions

R.J. Schreutelkamp, J.S. Custer, J.R. Liefting, F.W. Saris, W.X. Lu, B.X. Zhang, Z.L. Wang

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1992

Language:

english

File:

PDF, 702 KB

english, 1992

34

Radiological Abnormalities of the Manubriosternal Joint in Patients with Rheumatoid Arthritis and Osteoarthrosis

Verschuuren, J., Gobi The, H. S., Schreutelkamp, I., Houben, H. M., Burlage, F., Korte, Ph. De, Van Zanten, O. Veldhuyzen

Journal:

Scandinavian Journal of Rheumatology

Year:

1987

Language:

english

File:

PDF, 217 KB

english, 1987

35

[ECS 212th ECS Meeting - Washington, DC (October 7 - October 12, 2007)] ECS Transactions - Scaling Down of MOCVD HfSiON to 1nm EOT

Shi, Xiaoping, Rothschild, Aude, Everaert, Jean L., Van Elshocht, Sven, Date, Lucien, Schreutelkamp, Robert, Schaekers, Marc

Year:

2007

Language:

english

File:

PDF, 564 KB

english, 2007

36

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions

Bargallo Gonzalez, M., Eneman, G., Verheyen, P., Claeys, C., Benedetti, A., Bender, H., De Meyer, K., Simoen, E., Schreutelkamp, R., Washington, L., Nouri, F.

Year:

2006

Language:

english

File:

PDF, 1.97 MB

english, 2006

37

Technological aspects of epitaxial CoSi2 layers for CMOS

A. Lauwers, R.J. Schreutelkamp, B. Brijs, H. Bender, K. Maex

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 812 KB

english, 1993

38

Impact of precursor chemistry on atomic layer deposition of lutetium aluminates

Nyns, Laura, Shi, Xiaoping, Tielens, Hilde, Van Elshocht, Sven, Date, Lucien, Schreutelkamp, Robert

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2012

Language:

english

File:

PDF, 718 KB

english, 2012

39

In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Schreutelkamp, R. J., Vandenabeele, P., Deweerdt, B., Coppye, W., Vermeiren, C., Lauwers, A., Maex, K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 610 KB

english, 1992

40

The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

Pawlak, Bartek, Duffy, Ray, Augendre, Emmanuel, Severi, Simone, Janssens, Tom, Absil, Philippe, Vandervorst, Wilfried, Collart, Erik, Felch, Susan, Schreutelkamp, Robert, Cowern, Nick

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 121 KB

english, 2006

41

Gettering of Cu at Buried Damage Layers Made by Si Self Implantation

Liefting, J.R., Schreutelkamp, R.J., Lu, W.X., Saris, F.W.

Journal:

MRS Proceedings

Year:

1989

Language:

english

File:

PDF, 364 KB

english, 1989

42

In-situ emissivity and temperature measurement during rapid thermal processing (RTP)

Vandenabeele, P., Schreutelkamp, R. J., Maex, K., Vermeiren, C., Coppye, W.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 402 KB

english, 1992

43

[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

Kikuchi, Y., Hopf, T., Mannaert, G., Tao, Z., Waite, A., Cournoyer, J., Borniquel, J., Schreutelkamp, R., Ritzenthaler, R., Kim, M. S., Kubicek, S., Chew, S. A., Devriendt, K., Schram, T., Demuynck, S

Year:

2016

Language:

english

File:

PDF, 696 KB

english, 2016

44

Secondary defect reduction by channeling implantation of B and P in 〈100〉 silicon

V. Raineri, R.J. Schreutelkamp, F.W. Saris, R.E. Kaim, K.T.F. Janssen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

45

Emotional and behavioral problems in children with dilated cardiomyopathy

van der Mheen, Malindi, van der Meulen, Marijke H, den Boer, Susanna L, Schreutelkamp, Dayenne J, van der Ende, Jan, de Nijs, Pieter FA, Breur, Johannes MPJ, Tanke, Ronald B, Blom, Nico A, Rammeloo, L

Journal:

European Journal of Cardiovascular Nursing

Year:

2019

File:

PDF, 366 KB

2019

46

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

R.J. Schreutelkamp, B. Deweerdt, R. Verbeeck, K. Maex

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 438 KB

english, 1992

47

Determination of the density of states in amorphous silicon from thermostimulated conductivity measurements

G. Landweer, R. Schreutelkamp, H. Simons, J. Bezemer, W.F. van der Weg

Journal:

Journal of Non-Crystalline Solids

Year:

1987

Language:

english

File:

PDF, 177 KB

english, 1987

48

‘Blind’ review of interval breast cancers

J.M. de Rilke, L.J. Schouten, J.L. Schreutelkamp, I. Jochem, A.L.M. Verbeek

Journal:

European Journal of Cancer

Year:

1998

Language:

english

File:

PDF, 152 KB

english, 1998

49

Channeling implantation of B and P in silicon

R.J. Schreutelkamp, V. Raineri, F.W. Sans, R.E. Kaim, J.F.M. Westendorp, P.F.H.M. van der Meulen, K.T.F. Janssen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 440 KB

english, 1991

50

A new method for measuring the saturation velocity of submicron CMOS transistors

R.J. Schreutelkamp, L. Deferm

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 253 KB

english, 1995

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